Product Summary

The RF2336TR-7 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. The applications of the RF2336TR-7 are Broadband, Low Noise Gain Blocks, IF or RF Buffer Amplifiers, Driver Stage for Power Amplifiers, Final PA for Low Power Applications, Broadband Test Equipment.

Parametrics

RF2336TR-7 absolute maximum ratings: (1)Supply Current: 75 mA; (2)Input RF Power: +15 dBm; (3)Operating Ambient Temperature: -40 to +85 °C; (4)Storage Temperature: -60 to +150 °C.

Features

RF2336TR-7 features: (1)DC to 3000MHz Operation; (2)Internally matched Input and Output; (3)20dB Small Signal Gain; (4)3.8dB Noise Figure; (5)10mW Linear Output Power; (6)Single Positive Power Supply.

Diagrams

RF2336TR-7 pin configuration

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